MMBD4448HT 데이터 시트보기 (PDF) - Diodes Incorporated.
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MMBD4448HT Datasheet PDF : 4 Pages
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MMBD4448HT /HTA /HTC /HTS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
80
V
VR
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current (Note 5)
IFM
500
mA
Average Rectified Output Current (Note 5)
IO
250
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
150
833
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Leakage Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
Min
80
0.62
⎯
⎯
⎯
IR
⎯
CT
⎯
trr
⎯
Max
⎯
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
μA
μA
nA
pF
ns
Test Condition
IR = 2.5μA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 70V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 6V, f = 1.0MHz
VR = 6V, IF = 5mA
Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
250
1,000
200
100
150
10
100
50
1
0
0
40
80
120
160
200
TA, AMBIENT TEMPERATURE (° C)
Fig. 1 Power Derating Curve, Total Package (Note 5)
0.1
0
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
MMBD4448HT /HTA /HTC /HTS
Document number: DS30263 Rev. 13 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
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