1N4448HWS-7-F 데이터 시트보기 (PDF) - Diodes Incorporated.
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1N4448HWS-7-F Datasheet PDF : 4 Pages
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1N4448HWS
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Peak Reverse Current (Note 6)
Total Capacitance
Reverse Recovery Time
Symbol
VBR(R)
VFM
Min
80
0.62
IRM
CT
trr
Max
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
μA
μA
nA
pF
ns
Test Condition
IR = 100A
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 80V
VR = 75V, TJ = +150°C
VR = 25V, TJ = +150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
5. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
300
1000
200
Note 5
100
0
0
25
50
75 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
10.0
TA= 100°C
1.0
0.10
0.01
TA = 75°C
TA = 50°C
TA = 25°C
TA = -30°C
TA = 0°C
0.001
0
20
40
60
80
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
100
10
1
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0.1
0 200 400 600 800 1000 1200 1400 1600
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 2 Typical Forward Characteristics
4
3
2
1
0
0
1
2
3
4
5
6
VR, DC REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance vs. Reverse Voltage
1N4448HWS
Document number: DS30196 Rev. 12 - 2
2 of 4
www.diodes.com
September 2013
© Diodes Incorporated
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