1N4448HWS-7-F(2010) 데이터 시트보기 (PDF) - Diodes Incorporated.
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1N4448HWS-7-F Datasheet PDF : 4 Pages
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1N4448HWS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
80
V
VR
RMS Reverse Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ , TSTG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Peak Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Symbol
VBR(R)
VFM
Min
80
0.62
⎯
⎯
⎯
IRM
⎯
CT
⎯
trr
⎯
Max
⎯
0.72
0.855
1.0
1.25
100
50
30
25
3.5
4.0
Unit
V
V
nA
μA
μA
nA
pF
ns
Test Condition
IR = 100μA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 80V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes:
4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
300
100
200
100
Note 4
TA = 25°C
10
1
0
0
25
50
75 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
0.1
0
200
400
600
800 1,000
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
1N4448HWS
Document number: DS30196 Rev. 10 - 2
2 of 4
www.diodes.com
November 2010
© Diodes Incorporated
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