1N4448WS-7-F 데이터 시트보기 (PDF) - Diodes Incorporated.
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1N4448WS-7-F Datasheet PDF : 5 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
@t = 1.0μs
@t = 1.0s
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Value
100
75
53
500
250
4
0.5
1N4448WS
Unit
V
V
V
mA
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 7)
Thermal Resistance Junction to Ambient Air (Note 7)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Reverse Breakdown Voltage (Note 6)
Forward Voltage
Symbol
V(BR)R
VFM
Min
75
0.62
Max
0.72
0.855
1.0
1.25
Unit
V
V
Peak Reverse Current (Note 6)
Total Capacitance
2.5
µA
IRM
50
30
µA
µA
25
nA
CT
4.0
pF
Reverse Recovery Time
tRR
4.0
ns
Notes:
6. Short duration pulse test used to minimize self-heating.
7. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website
http://www.diodes.com/datasheets/ap02001.pdf.
Test Condition
IR = 2.5µA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, TJ = +150°C
VR = 25V, TJ = +150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
IRR = 0.1 x IR, RL = 100Ω
1N4448WS
Document number: DS30096 Rev. 15 - 2
2 of 5
www.diodes.com
November 2015
© Diodes Incorporated
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