STB160NF3LL_06 데이터 시트보기 (PDF) - STMicroelectronics
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STB160NF3LL_06 Datasheet PDF : 13 Pages
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STB160NF3LL
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VDGR
Drain-gate voltage (RGS = 20 kΩ)
VGS
ID(1)
ID(1)
IDM(2)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating Factor
dv/dt(3) Peak diode recovery avalanche energy
EAS (4)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD ≤160A, di/dt ≤100A/µs, VDD =V(BR)DSS, Tj ≤TJMAX
4. Starting Tj = 25 °C, ID = 30A, VDD = 15V
Value
30
30
± 16
160
160
640
300
2
2
1.2
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose (1)
1. for t ≤10sec. 1.6mm from case
0.5
°C/W
62.5
°C/W
300
°C
3/13
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