NTE7144 데이터 시트보기 (PDF) - NTE Electronics

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NTE7144

Integrated Circuit BIMOS Operational Amplifier w/MOSFET Input, Bipolar Output

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C, V+ = +15V, V– = –15V unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Gain–Bandwidth Product

fT

Slew Rate

SR

– 4.5 – MHz

–

9

– V/µs

Sink Current from Pin8 to Pin4 to Swing

Output Low

– 220 –

µA

Transient Response:

Rise Time

Overshoot

tr

RL = 2kΩ, CL = 100pF

– 0.08 –

µs

– 10 –

%

Setting Time at 10VP–P

1mV

10mV

ts

RL = 2kΩ, CL = 100pF,

Voltage Follower

– 4.5 –

µs

– 1.4 –

µs

Note 2. VO = 26VP–P, +12V, –14V and RL = 2kΩ.

Electrical Characteristics: (TA = +25°C, V+ = +5V, V– = –5V unless otherwise specified)

Input Offset Voltage

|VIO|

–

2

–

Input Offset Current

|IIO|

– 0.1 –

Input Current

II

–

2

–

Input Resistance

RI

–

1

–

Large–Signal Voltage Gain

AOL

– 100k –

– 100 –

Common–Mode Rejection Ratio

CMRR

– 32 –

– 90 –

Common–Mode Input–Voltage Range VICR

– –0.5 –

– +2.6 –

Power Supply Rejection Ratio

∆VIO/∆V

PSSR

– 100 –

– 80 –

Maximum Output Voltage

Maximum Output Current:

Source

Sink

Slew Rate

VOM+

VOM–

IOM+

IOM–

SR

– 3.0 –

– 0.13 –

– 10 –

–

1

–

–

7

–

Gain–Bandwidth Product

fT

Supply Current

I+

– 3.7 –

– 1.6 –

Device Dissipation

PD

Sink Current from Pin8 to Pin4 to

Swing Output Low

–

8

–

– 200 –

mV

pA

pA

TΩ

V/V

dB

µV/V

dB

V

V

µV/V

dB

V

V

mA

mA

V/µs

MHz

mA

mW

µA

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