IGP10N60T(2006) 데이터 시트보기 (PDF) - Infineon Technologies
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IGP10N60T Datasheet PDF : 12 Pages
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TrenchStop® Series
IGP10N60T
q
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
C
• Designed for :
- Variable Speed Drive for washing machines and air
conditioners
- induction cooking
G
E
- Uninterrupted Power Supply
• TrenchStop® and Fieldstop technology for 600 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
PG-TO-220-3-1
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKP10N60T
VCE
600V
IC
VCE(sat),Tj=25°C Tj,max Marking Code
Package
10A
1.5V
175°C G10T60 PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 600V, Tj ≤ 175°C
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
VGE
tSC
Ptot
Tj
Tstg
Value
Unit
600
V
A
20
10
30
30
±20
V
5
µs
110
W
-40...+175
°C
-55...+175
260
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 June 06
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