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RD2V0E…RD200E
Characteristics at Ta = 25 OC
Zener Voltage
Type
VZ (V) 1)
Min.
RD2V0EB
1.88
RD2V0EB1
1.88
RD2V0EB2
2.02
RD2V2EB
2.12
Max.
2.2
2.1
2.2
2.41
lZ (mA)
20
RD2V2EB1
2.12
2.3
20
RD2V2EB2
2.22
2.41
RD2V4EB
2.33
2.63
RD2V4EB1
2.33
2.52
20
RD2V4EB2
2.43
2.63
RD2V7EB
2.54
2.91
RD2V7EB1
2.54
2.75
20
RD2V7EB2
2.69
2.91
RD3V0EB
2.85
3.22
RD3V0EB1
2.85
3.07
20
RD3V0EB2
3.01
3.22
RD3V3EB
3.16
3.53
RD3V3EB1
3.16
3.38
20
RD3V3EB2
3.32
3.53
RD3V6EB
3.47
3.83
RD3V6EB1
3.47
3.68
20
RD3V6EB2
3.62
3.83
RD3V9EB
3.77
4.14
RD3V9EB1
3.77
3.98
20
RD3V9EB2
3.92
4.14
RD4V3EB
4.05
4.53
RD4V3EB1
4.05
RD4V3EB2
4.2
4.26
4.4
20
RD4V3EB3
4.34
4.53
RD4V7EB
4.47
4.91
RD4V7EB1
4.47
RD4V7EB2
4.59
4.65
4.77
20
RD4V7EB3
4.71
4.91
RD5V1EB
4.85
5.35
RD5V1EB1
4.85
RD5V1EB2
4.97
5.03
5.18
20
RD5V1EB3
5.12
5.35
RD5V6EB
5.29
5.88
RD5V6EB1
5.29
RD5V6EB2
5.46
5.52
5.7
20
RD5V6EB3
5.64
5.88
RD6V2EB
5.81
6.4
RD6V2EB1
5.81
RD6V2EB2
5.99
6.06
6.24
20
RD6V2EB3
6.16
6.4
RD6V8EB
6.32
6.97
RD6V8EB1
6.32
6.59
RD6V8EB2
6.52
6.79
20
RD6V8EB3
6.7
6.97
RD7V5EB
6.88
7.64
RD7V5EB1
6.88
RD7V5EB2
7.11
7.19
7.41
20
RD7V5EB3
7.33
7.64
RD8V2EB
7.56
8.41
RD8V2EB1
7.56
7.9
RD8V2EB2
7.82
8.15
20
RD8V2EB3
8.07
8.41
Dynamic Impedance
ZZ (Ω) 2)
Max.
lZ (mA)
140
20
120
20
100
20
100
20
80
20
70
20
60
20
50
20
40
20
25
20
20
20
13
20
10
20
8
20
8
20
8
20
Knee Dynamic Impedance
ZZK (Ω) 2)
Max.
lZ (mA)
2000
1
2000
1
2000
1
1000
1
1000
1
1000
1
1000
1
1000
1
1000
1
900
1
800
1
500
1
300
1
150
0.5
120
0.5
120
0.5
Reverse Current
IR (µA)
Max. VR (V)
120
0.5
120
0.7
120
1
100
1
50
1
20
1
10
1
5
1
5
1
5
1
5
1.5
5
2.5
5
3
2
3.5
0.5
4
0.5
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007