SB110 데이터 시트보기 (PDF) - Diodes Incorporated.
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SB110 Datasheet PDF : 2 Pages
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SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Ideally Suited for Automatic Assembly
· Low Power Loss, High Efficiency
· Surge Overload Rating to 25A Peak
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· High Temperature Soldering:
260°C/10 Second at Terminal
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 0.3 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
A
B
A
C
D
DO-41
Dim
Min
Max
A
25.4
¾
B
4.1
5.2
C
0.71
0.86
D
2.0
2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 85°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ IF = 1.0A
@ TA = 25°C
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
@ TA = 25°C
@ TA = 100°C
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RqJL
RqJA
Tj, TSTG
SB170
70
49
SB180
SB190
80
90
56
63
1.0
25
0.80
0.5
10
80
15
50
-65 to +125
SB1100 Unit
100
V
70
V
A
A
V
mA
pF
K/W
K/W
°C
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30116 Rev. B-1
1 of 2
SB170 - SB1100
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