NTE3029A 데이터 시트보기 (PDF) - NTE Electronics

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NTE3029A

Infrared–Emitting Diode

NTE Electronics 

Optical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Peak Emission Wavelength

Spectral Half Power Wavelength

λP IF = 50mA

Spectral Output Temperature Shift

Axial Power Output Intensity

Intensity Per Unit Solid Angle

Power Half–Angle

PO IF = 20mA, Note 4

Ee IF = 20mA, Note 4

Ω

Rise Time and Fall Time

tr, tf

Min Typ Max Unit

930 940 950

nm

– 48 –

nm

– 0.3 –

nm/°C

50 150 – µW/ sq cm

0.2 0.65 – mW/Sr

– ±20 –

°

– 1.0 –

µs

Note 4 Measured using a 11.28 mm diameter detector placed 21 mm away from the device under

test.

.125

(3.17)

.160 (4.06)

.045 (1.14) Dia

.120

(3.04)

.168

(4.27)

.750

(19.05)

Max

.020 (.508)

K

A

.103

(2.62)

.100 (2.54)

.060 (1.52)

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