2N5038 데이터 시트보기 (PDF) - Semicoa Semiconductor

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2N5038

Silicon NPN Transistor

Semicoa Semiconductor 

2N5038

Silicon NPN Transistor

Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C

Off Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max Units

Collector-Emitter Breakdown Voltage V(BR)CEO IC = 200 mA

90

Volts

Emitter-Base Breakdown Voltage

V(BR)EBO IE = 25 mA

7

Volts

Collector-Base Cutoff Current

ICBO1 VCB = 150 Volts

1

µA

Collector-Emitter Cutoff Current

ICEO VCE = 70 Volts

1

µA

Collector-Emitter Cutoff Current

Emitter-Base Cutoff Current

ICEX1

ICEX2

IEBO

VCE =100Volts, VEB =1.5Volts

VCE =100Volts, VEB=1.5Volts,

TA = 150°C

VEB = 5 Volts

5

100

µA

1

µA

On Characteristics

Parameter

DC Current Gain

Base-Emitter Voltage

Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Symbol

hFE1

hFE2

hFE3

hFE4

VBE

VBEsat

VCEsat1

VCEsat2

Test Conditions

IC = 0.5 A, VCE = 5 Volts

IC = 2 A, VCE = 5 Volts

IC = 12 A, VCE = 5 Volts

IC = 12 A, VCE = 5 Volts

TA = -55°C

VCE = 5 Volts, IC = 12 A

IC = 20 A, IB = 5 A

IC = 12 A, IB = 1.2 A

IC = 20 A, IB = 5 A

Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%

Min

Typ

Max Units

50

50

200

15

10

1.8

Volts

3.3

Volts

1.0

Volts

2.5

Dynamic Characteristics

Parameter

Magnitude – Common Emitter, Short

Circuit Forward Current Transfer Ratio

Open Circuit Output Capacitance

Symbol

|hFE|

COBO

Test Conditions

VCE = 10 Volts, IC = 2 A,

f = 5 MHz

VCB = 10 Volts, IE = 0 mA,

100 kHZ < f < 1 MHz

Min

Typ

Max Units

12

48

500

pF

Switching Characteristics

Saturated Turn-On Time

Saturated Turn-Off Time

tON

IC = 12 A, IB1 = 1.2 A

tOFF

IC = 12 A, IB1 = -IB2 = 1.2 A

0.5

µs

2.0

µs

Copyright 2002

Rev. E

Semicoa Semiconductors, Inc.

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

www.SEMICOA.com

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