NTE5703 데이터 시트보기 (PDF) - NTE Electronics
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NTE5703 Datasheet PDF : 4 Pages
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Electrical Characteristics:
Parameter
Symbol
Test Conditions
Rating Unit
Forward Conduction
Maximum DC Output Current
IO TC = +85°C, Full Bridge Circuits
(NTE5700, NTE5701, NTE5702)
25
A
Maximum Average On--State
and Forward Current
Maximum RMS Current
IT(AV)
IF(AV)
IRMS
180° Sine Wave Conduction Circuits
(All Types)
180° Sine Wave Conduction Circuit
(NTE5702)
12.5 A
28
A
Maximum Peak, One--Cycle
Non--Repetitive On--State
or Forward Current
Maximum I2t for Fusing
Maximum I2Öt for Fusing
ITSM
or
IFSM
I2t
I2Öt
10ms 100% VRRM Sinusoidal Half Wave,
8.3ms Reapplied Initial TJ = TJ Max
10ms No Voltage
8.3ms Reapplied
10ms 100% VRRM Initial TJ = TJ Max
8.3ms Reapplied
10ms No Voltage
8.3ms Reapplied
t = 0.1 to 10ms, No Voltage Reapplied, Note 2
300
315
357
375
450
410
637
580
6365
A
A
A
A
A2s
A2s
A2s
A2s
A2Ös
Maximum Value of Threshold
Voltage
VT(TO) TJ = +125°C
0.82 V
Maximum Value of On--State
Slope Resistance
rT
TJ = +125°C
12 mW
Maximum Peak On--State
or Forward Voltage
VTM
VFM
ITM = p x IT(AV)
IFM = p x IF(AV)
T18J 0=°
+25°C,
Condition
1.35 V
1.35 V
Maximum Non--Repetitive Rate
of Rise of Turned On Circuit
di/dt
TIgJ==5+0102m5°AC,,trfr<om0.50m.6s7,VtpDR>M6,mITsM = p x IT(AV),
200 A/ms
Maximum Holding Current
IH
RTJes=is+t2iv5e°CLo, aAdn,oGdeatSeuOpppelyn=C6irVc,uit
100 mA
Maximum Latching Current
IL
RTJes=is+t2iv5e°CLo, aAdnode Supply = 6V,
250 mA
Triggering
Maximum Peak Gate Power
Maximum Average Gate Power
Maximum Peak Gate Current
Maximum Peak Negative Gate
Voltage
PGM
PG(AV)
IGM
--VGM
8.0 W
2.0 W
2.0 A
10
V
Maximum Gate Voltage Required VGT TJ = --40°C
to Trigger
TJ = +25°C
TJ = +125°C
Anode Supply = 6V
Resistive Load
3.0 V
2.0 V
1.0 V
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