BDX67A 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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BDX67A Datasheet PDF : 2 Pages
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MECHANICAL DATA
Dimensions in mm
26.6 max.
4.2
B
E
9.0 max.
2.5
BDX67
BDX67A
BDX67B
BDX67C
NPN EPITAXIAL BASE
DARLINGTON POWER
TRANSISTOR
NPN epitaxial base transistors in
monolithic Darlington circuit for
audio output stages and general
amplifier and switching
applications.
10.9
12.8
PNP complements are:
BDX66, BDX66A, BDX66B, BDX66C.
TO3 Package.
Case connected to collector.
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
BDX BDX BDX BDX
67 67A 67B 67C
VCEO
Collector - emitter voltage (open base)
60 80 100 120 V
VCBO
Collector - base voltage (open emitter)
80 100 120 140 V
VEBO
Emitter - base voltage (open collector)
5 5 5 5V
IC
Collector current
16
A
ICM
Collector current (peak)
20
A
IB
Base current
250
mA
Ptot
Total power dissipation at Tmb= 25°C
150
W
Tj
Maximum junction temperature
200
°C
Tstj
Storage junction temperature
-65 to +200
°C
Rth j-mb
Thermal resistance, junction to mounting base.
1.17
K/ W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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