SM8S11A 데이터 시트보기 (PDF) - Vishay Semiconductors
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SM8S11A Datasheet PDF : 5 Pages
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www.vishay.com
SM8S10 thru SM8S43A
Vishay General Semiconductor
100
100 000
RθJA
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
RθJC
10 000
Measured at Zero Bias
0.1
0.01
0.01
0.1
1
10
100
t - Pulse Width (s)
Fig. 5 - Typical Transient Thermal Impedance
Measured at Stand-Off
Voltage VWM
1000
10 15 20 25 30 35 40 45
VWM - Reverse Stand-Off Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
Lead 1
0.197 (5.0)
0.185 (4.7)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.091 (2.3)
0.067 (1.7)
0.116 (3.0)
0.093 (2.4)
Revision: 31-Aug-16
4
Document Number: 88387
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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