2SH14 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SH14 Datasheet PDF : 8 Pages
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ADE–208–287 (Z)
2SH14
Silicon N-Channel IGBT
1st. Editon
Feb. 1995
Application
High speed power switching
TO–3P
Features
• High speed switching
• Low on saturation voltage
2
1
1
3
2
3
1. Gate
2. Collector
3. Emitter
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
VCES
600
V
———————————————————————————————————————————
Gate to emitter voltage
VGES
±20
V
———————————————————————————————————————————
Collector current
IC
30
A
———————————————————————————————————————————
Collector peak current
ic(peak)
60
A
———————————————————————————————————————————
Collector dissipation
PC*
100
W
———————————————————————————————————————————
Channel temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1
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