RF3330 데이터 시트보기 (PDF) - RF Micro Devices

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RF3330

IF GAIN CONTROLLED AMPLIFIER

RF Micro Devices 

RF3330

Preliminary

Absolute Maximum Ratings

Parameter

Supply Voltage

Operating Ambient Temperature

Storage Temperature

Rating

7

-40 to +85

-60 to +150

Unit

V

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

3

Overall

DC Specifications

Supply Voltage

Supply Current

AGC Control Voltage

AGC Input Impedance

AC Specifications

3dB Bandwidth

Voltage Gain

Maximum

Minimum

Maximum Input Level

Maximum Output Level

Output 1dB Compression

Output Harmonic Distortion

Input IP3, Maximum Gain

Input IP3, Minimum Gain

Input Noise, Maximum Gain

Input Noise, Minimum Gain

Output Impedance

Input Impedance

Output Load Impedance

Output Load Capacitance

Specification

Min.

Typ.

Max.

Unit

Condition

Typical performance is at TA=+25°C,

VCC = 5 V.

4.75

5.0

5.25

V

18

25

mA

0.5

3.3

V

0.5V=Minimum Gain

3.3V=Maximum Gain

10

MΩ

150

MHz

33.0

34.0

dB

VAGC =3.3V

8.0

10.0

dB

VAGC =0.5V

50

dBmV(rms) While meeting distortion specification

50

dBmV(rms) While meeting distortion specification

66

dBmV(rms) Maximum Gain

-44

-40

dBc

Output level=50dBmV(rms); VAGC=3.3V

45

dBmV(rms) Output level=50dBmV(rms); VAGC=3.3V

60

dBmV(rms) Output level=50dBmV(rms); VAGC=0.5V

4.5

nV/rtHz

42

nV/rtHz

10

Ω

Differential

2000

Ω

Differential

1

kΩ

Differential

2

pF

Differential

3-2

Rev A2 010820

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