BDX69 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDX69 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BDX69/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min)@ IC= 20A
·Low Saturation Voltage
·Complement to Type BDX68/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX69
80
BDX69A
100
VCBO
Collector-Base Voltage
V
BDX69B
120
BDX69C 140
BDX69
60
BDX69A
80
VCEO
Collector-Emitter Voltage
V
BDX69B
100
BDX69C 120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
25
A
ICM
Collector Current-Peak
40
A
IBB
Base Current
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
500
mA
150
W
200
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.875 ℃/W
isc Website：www.iscsemi.cn
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