PM75CSD060 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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PM75CSD060 Datasheet PDF : 8 Pages
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MITMSUITBSIUSBHIS<HINI T<EINLTLEIGLLEINGTENPOT WPOEWR EMROMDUOLDEUSL>ES>
PM75CPMS7D5C0S6D0060
FLAFTL-ABTA-SBEASTEYPTEYPE
INSIUNLSAUTLEADTEPDACPKAACGKAEGE
PM75CSD060
FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
c) Keeping the package compatibility.
The layout/position of both terminal pin and mounting hole
is same as S-series 3rd generation IPM.
• 3φ 75A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
(P-Fo available from upper leg devices)
• Acoustic noise-less 5.5/7.5kW class inverter application
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
110±1
95±0.5
17.02 3-2 10 3-2 10 3-2 10 6-2
3.22
1234
567 8
9 11
10 12
13 15 17 19
14 16 18
4-φ5.5
MOUNTING HOLES
12
W
0.5±0.3
24.5
A
V
U
26
26
66.44
19- 0.5
4-R6
6-M5NUTS
2-φ2.54
Screwing depth
Min9.0
21.2
22
+1.0
–0.5
Terminal code
1. VUPC 11. WP
2. UFO 12. VWP1
3. UP 13. VNC
4. VUP1 14. VN1
5. VVPC 15. NC
6. VFO 16. UN
7. VP 17. VN
8. VVP1 18. WN
9. VWPC 19. Fo
10. WFO
φ2.54
3.22 3-2
0.5
A : DETAIL
LABEL
Jul. 2005
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