BAV70M 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAV70M

High-speed switching diodes

NXP Semiconductors. 

NXP Semiconductors

BAV70 series

High-speed switching diodes

7. Characteristics

Table 8. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

Per diode

VF

forward voltage

[1]

IF = 1 mA

-

-

IF = 10 mA

-

-

IF = 50 mA

-

-

IF = 150 mA

-

-

IR

reverse current

VR = 25 V

-

-

VR = 80 V

-

-

VR = 25 V; Tj = 150 °C -

-

VR = 80 V; Tj = 150 °C -

-

Cd

diode capacitance

VR = 0 V; f = 1 MHz

-

-

trr

reverse recovery time

[2] -

-

VFR

forward recovery voltage

[3] -

-

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

[3] When switched from IF = 10 mA; tr = 20 ns.

Max Unit

715 mV

855 mV

1

V

1.25 V

30 nA

0.5 µA

30 µA

100 µA

1.5 pF

4

ns

1.75 V

BAV70_SER_7

Product data sheet

Rev. 07 — 27 November 2007

© NXP B.V. 2007. All rights reserved.

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