NXP Semiconductors
BAV70 series
High-speed switching diodes
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot
total power dissipation
[2]
BAV70
Tamb ≤ 25 °C
-
BAV70M
Tamb ≤ 25 °C
[3] -
BAV70S
Ts = 60 °C
-
BAV70T
Ts = 90 °C
-
BAV70W
Tamb ≤ 25 °C
-
Per device
IF
forward current
BAV70
Tamb ≤ 25 °C
-
BAV70M
Ts = 90 °C
-
BAV70S
Ts = 60 °C
-
BAV70T
Ts = 90 °C
-
BAV70W
Tamb ≤ 25 °C
-
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
250
mW
250
mW
350
mW
170
mW
200
mW
125
mA
75
mA
100
mA
75
mA
100
mA
150
°C
+150 °C
+150 °C
[1] Tj = 25 °C prior to surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
BAV70_SER_7
Product data sheet
Table 7. Thermal characteristics
Symbol Parameter
Per diode
Rth(j-a)
thermal resistance from
junction to ambient
BAV70
BAV70M
BAV70W
Rth(j-t)
thermal resistance from
junction to tie-point
BAV70
BAV70W
Rth(j-sp)
thermal resistance from
junction to solder point
BAV70S
BAV70T
Conditions
in free air
Min Typ Max Unit
[1]
-
-
500 K/W
[2] -
-
500 K/W
-
-
625 K/W
-
-
360 K/W
-
-
300 K/W
-
-
255 K/W
-
-
350 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
Rev. 07 — 27 November 2007
© NXP B.V. 2007. All rights reserved.
4 of 15