BAV70,215(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAV70,215
(Rev.:2015)

High-speed switching diodes

NXP Semiconductors. 

NXP Semiconductors

8. Test information

BAV70 series

High-speed switching diodes

RS = 50 Ω

V = VR + IF × RS

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

Ri = 50 Ω

VR

mga881

tr

tp

10 %

90 %

input signal

t

+ IF

trr

t

(1)

output signal

(1) IR = 1 mA

Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle  = 0.05

Oscilloscope: rise time tr = 0.35 ns

Fig 5. Reverse recovery time test circuit and waveforms

I

1 kΩ

450 Ω

RS = 50 Ω

D.U.T.

OSCILLOSCOPE

Ri = 50 Ω

I

90 %

10 %

tr

tp

input signal

V

VFR

t

t

output signal

mga882

Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp  100 ns; duty cycle   0.005

Fig 6. Forward recovery voltage test circuit and waveforms

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

BAV70_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 8 — 18 March 2015

© NXP Semiconductors N.V. 2015. All rights reserved.

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