BAV70S115(2015) 데이터 시트보기 (PDF) - NXP Semiconductors.
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BAV70S115 Datasheet PDF : 17 Pages
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NXP Semiconductors
BAV70 series
High-speed switching diodes
4. Marking
Table 5. Marking codes
Type number
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Marking code[1]
A4*
S4
A4*
A4
A4*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VRRM
repetitive peak reverse
-
voltage
VR
reverse voltage
-
IF
forward current
BAV70
Tamb 25 C
-
BAV70M
Ts = 90 C
-
BAV70S
Ts = 60 C
-
BAV70T
Ts = 90 C
-
BAV70W
Tamb 25 C
-
IFRM
repetitive peak forward
current
BAV70
-
BAV70M
-
BAV70S
-
BAV70T
-
BAV70W
-
IFSM
non-repetitive peak forward square wave
[1]
current
tp = 1 s
-
tp = 1 ms
-
tp = 1 s
-
Max Unit
100
V
100
V
215
mA
150
mA
250
mA
150
mA
175
mA
450
mA
500
mA
450
mA
500
mA
500
mA
4
A
1
A
0.5
A
BAV70_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 18 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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