SBSS84LT1G 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
일치하는 목록
SBSS84LT1G Datasheet PDF : 4 Pages
| |||
BSS84LT1, SBSS84LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = −250 mAdc)
Zero Gate Voltage Drain Current
(VDS = −25 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc)
(VDS = −50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate−Source Threaded Voltage (VDS = VGS, ID = −250 mA)
Static Drain−to−Source On−Resistance (VGS = −5.0 Vdc, ID = −100 mAdc)
Transfer Admittance (VDS = −25 Vdc, ID = −100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
VDS = 5.0 Vdc
VDS = 5.0 Vdc
VDG = 5.0 Vdc
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
VDD = −15 Vdc, ID = −2.5 Adc,
RL = 50 W
Fall Time
Gate Charge
VDD = −40 Vdc, ID = −0.5 A,
VGS = −10 V
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2)
VGS = 0 V, IS = −130 mA
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
IS
ISM
VSD
Min
−50
−
−
−
−
−0.9
−
50
−
−
−
−
−
−
−
−
−
−
−
Typ
Max
Unit
−
−
Vdc
mAdc
−
−0.1
−
−15
−
−60
−
±10
nAdc
−
−2.0
Vdc
4.7
10
W
−
−
mS
36
−
pF
17
−
6.5
−
3.6
−
ns
9.7
−
12
−
1.7
−
2.2
−
nC
−
−0.130
A
−
−0.520
−
−2.2
V
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
VDS = 10 V
0.5
0.4
0.3
25°C
- 55°C
150°C
0.2
0.1
0
1
1.5
2
2.5
3
3.5
4
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
0.5
0.45 TJ = 25°C
0.4
VGS = -3.5 V
-3.25 V
0.35
0.3
-3.0 V
0.25
0.2
-2.75 V
0.15
-2.5 V
0.1
0.05
-2.25 V
0
0 1 2 3 4 5 6 7 8 9 10
-VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
http://onsemi.com
2
Share Link: 