2N720A(1988) 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
일치하는 목록
2N720A Datasheet PDF : 4 Pages
| |||
2N720A
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
97.2
Max
350
ELECTRICAL CHARACTERISTICS(Tamb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
ICBO
Collector Cutoff Current
(IE = 0)
VCB = 90 V
V(B R)CBO Collector–base Breakdown I C = 100 µA
120
Voltage
(IE = 0)
V(BR)CE O * Collector–emitter Breakdown IC = 30 mA
80
Voltage
(IB = 0)
V(B R)E BO Emitter–base Breakdown
IE = 100 µA
7
Voltage
(IE = 0)
IEBO
Emitter Cuttoff Current
(IE = 0)
VEB = 5 V
VCE(sat)* Collector–emitter Saturation IC = 50 mA
Voltage
IC = 150 mA
IB = 5 mA
IB = 15 mA
VBE( sat)* Base–emitter Saturation
Voltage
IC = 50 mA
IC = 150 mA
IB = 5 mA
IB = 15 mA
hFE*
DC Current Gain
IC = 100 µA
VCE = 10 V
20
IC = 10 mA
VCE = 10 V
35
I C = 150 mA VCE = 10 V
40
hfe
High Frequency Current
IC = 50 mA
VCE = 10 V
2.5
Gain
f = 20 MHz
C CBO
Collector–base Capacitance IE = 0
f = 1 MHz
VCB = 10 V
CEBO
Emitter–base Capacitance
IC = 0
f = 1 MHz
VEB = 0.5 V
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Typ.
Max.
10
10
1.2
5
0.9
1.3
120
15
85
°C/W
°C/W
Unit
nA
V
V
V
nA
V
V
V
V
–
–
–
–
pF
pF
2/4
Share Link: 