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2N6796

TMOS FET ENHANCEMENT N - CHANNEL

Semelab - > TT Electronics plc  

2N6796

MECHANICAL DATA

Dimensions in mm (inches)

8.64 (0.34)

9.40 (0.37)

8.01 (0.315)

9.01 (0.355)

4.06 (0.16)

4.57 (0.18)

12.70

(0.500)

min.

(00.0.8395)max.

0.41 (0.016)

0.53 (0.021)

dia.

5.08 (0.200)

typ.

0.74 (0.029)

1.14 (0.045)

0.71 (0.028)

0.53 (0.021)

2

1

3

2.54

(0.100)

45°

TO–39 PACKAGE (TO-205AF)

Underside View

PIN 1 – Source PIN 2 – Gate

PIN 3 – Drain

TMOS FET

ENHANCEMENT

N - CHANNEL

FEATURES

• V(BR)DSS = 100V

• ID = 8A

• RDSON = 0.18Ω

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDS

VDGR

VGS

ID

IDM

PD

Drain–Source Voltage

Drain–Source Voltage (RGS = 1.0 mΩ)

Gate–Source Voltage

Drain Current Continuous TCase = 25°C

Drain Current Pulsed

Total Device Dissipation @ TCase = 25°C

Derate above 25°C

100V

100V

±20V

8.0A

32A

25W

0.2W/°C

TJ , TSTG Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

–55 to +150°C

RθJC

RθJA

TL

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

Maximum Lead Temperature 1.6mm from Case for 10 secs.

5.0°C/W

175°C/W

300°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 3095

Issue 1

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