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IRFM150 Datasheet PDF : 2 Pages
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SEME
LAB
2N7224
IRFM150
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance
IDSS Zero Gate Voltage Drain Current
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
VGS = 10V
VDS = VGS
VDS ³ 15V
VGS = 0
VGS = 20V
VGS = –20V
ID = 21A
ID = 34A
ID = 250mA
IDS = 21A
VDS = 0.8BVDSS
TJ = 125°C
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V
VDS = 0.5BVDS
ID =34A
VDS = 0.5BVDS
ID = 34A
VDD = 50V
ID = 34A
RG = 2.35W
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 2
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn–On Time
IS = 34A
TJ = 25°C
VGS = 0
IF = 34A
TJ = 25°C
di / dt £ 100A/ms VDD £ 50V
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance (from centre of drain pad to die)
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Min. Typ. Max.
100
0.13
0.070
0.081
2
4
9
25
250
100
–100
3700
1100
200
50
125
8
22
15
65
35
190
170
130
34
136
1.8
500
2.9
Negligible
8.7
8.7
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Unit
V
V/°C
W
V
S((WW)
mA
nA
pF
nC
nC
ns
A
V
ns
mC
nH
2/99
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