TIP160 데이터 시트보기 (PDF) - Power Innovations Ltd

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TIP160

NPN SILICON POWER DARLINGTONS

Power Innovations Ltd 

TIP160, TIP161, TIP162

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

ICEO

Collector-emitter

cut-off current

ICEX(sus)

IEBO

hFE

VCE(sat)

VBE(sat)

VEC

Collector-emitter

sustaining current

Emitter cut-off

current

Forward current

transfer ratio

Collector-emitter

saturation voltage

Base-emitter

saturation voltage

Parallel diode

forward voltage

VCE = 320 V

VCE = 350 V

VCE = 380 V

VCLAMP = V(BR)CEO

IB = 0

IB = 0

IB = 0

VEB = 5 V

IC = 0

VCE = 2.2 V

IB = 0.1A

IB =

1A

IB = 0.1A

IC = 4 A

IC = 6.5 A

IC = 10 A

IC = 6.5 A

IE = 10 A

IB = 0

TIP160

TIP161

TIP162

1

7

100

(see Notes 5 and 6) 200

2.8

(see Notes 5 and 6)

2.9

(see Notes 5 and 6)

2.2

(see Notes 5 and 6)

3.5

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

mA

A

mA

V

V

V

thermal characteristics

RθJC

RθJA

CθC

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

Thermal capacitance of case

MIN TYP MAX UNIT

1 °C/W

41.7 °C/W

1.4

J/°C

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

td

Delay time

tr

Rise time

ts

Storage time

tf

Fall time

IC = 6.5 A

VBE(off) = -5 V

IB(on) = 100 mA

RL = 5 Ω

IB(off) = -100 mA

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

MIN TYP MAX UNIT

40

ns

1.5

µs

2.2

µs

2.6

µs

PRODUCT INFORMATION

2

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