2N6052 데이터 시트보기 (PDF) - Comset Semiconductors

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2N6052

POWER COMPLEMENTARY SILICON TRANSISTORS

Comset Semiconductors 

PNP 2N6050 – 2N6051 – 2N6052

POWER COMPLEMENTARY SILICON TRANSISTORS

The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington

configuration mounted in Jedec TO-3 metal case.

They are inteded for use in power linear and low frequency switching applications.

The complementary NPN types are 2N6057, 2N6058 and 2N6059 respectively.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

VCBO

Collector-Base Voltage

IE=0

VCEO

Collector-EmitterVoltage

IB=0

VCEX

VEBO

IC

ICM

IB

PT

TJ

Ts

Collector-EmitterVoltage

Emitter-Base Voltage

Collector Current

Collector Peak Current

Base Current

Power Dissipation

Junction Temperature

Storage Temperature

VBE= 1.5 V

IC=0

@ TC < 25°

Value

2N6050

2N6051

2N6052

2N6050

2N6051

2N6052

2N6050

2N6051

2N6052

-60

-80

-100

-60

-80

-100

-60

-80

-100

-5.0

-12

-20

-200

150

200

-65 to +200

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-C

Thermal Resistance, Junction to Case

Value

1.17

Unit

V

V

V

V

A

A

mA

W

°C

Unit

°C/W

17/10/2012

COMSET SEMICONDUCTORS

1|3

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