RF2301 데이터 시트보기 (PDF) - RF Micro Devices

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RF2301

HIGH ISOLATION BUFFER AMPLIFIER

RF Micro Devices 

RF2301

Absolute Maximum Ratings

Parameter

Supply Voltage (VDD)

DC Supply Current

Input RF Power

Operating Ambient Temperature

Storage Temperature

Rating

-0.5 to +6.5

60

+10

-40 to +85

-40 to +150

Unit

VDC

mA

dBm

°C

°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate

at the time of this printing. However, RF Micro Devices reserves the right to

make changes to its products without notice. RF Micro Devices does not

assume responsibility for the use of the described product(s).

Parameter

Specification

Unit

Min.

Typ.

Max.

Condition

4

Overall

Nominal Frequency Range

300 to 2500

MHz

T=25°C, VDD=5VDC

Input IP3

-8

dBm

Noise Figure

8

dB

Input VSWR

<2:1

In a 50Ω system

Output VSWR

<2:1

In a 50Ω system

Power Supply Voltage

2.7 to 6.0

V

Nominal 5V Configuration

Using Broad Band Application Circuit,

VDD=5VDC, Freq=2500MHZ, T=25°C

Gain

21

24

26

dB

P1dB Output Power

+4

dBm

Supply Current

10

30

40

mA

Reverse Isolation

50

dB

900MHz, without RF input

50

dB

900MHz, with RF input, saturated

40

dB

2500MHz, without RF input

40

dB

2500MHz, with RF input, saturated

Nominal 3V Configuration

Using Broad Band Application Circuit,

VDD=3VDC, Freq=2500MHZ, T=25°C

Gain

15

17

dB

P1dB Output Power

0

dBm

Supply Current

14

mA

Reverse Isolation

50

dB

900MHz, without RF input

50

dB

900MHz, with RF input, saturated

40

dB

2500MHz, without RF input

40

dB

2500MHz, with RF input, saturated

4-38

Rev A8 010717

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