STTH8003CY(1999) 데이터 시트보기 (PDF) - STMicroelectronics

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STTH8003CY
(Rev.:1999)

HIGH FREQUENCY SECONDARY RECTIFIERS

STMicroelectronics 

STTH8003CY

THERMAL RESISTANCES

Symbol

Parameter

Rth (j-c) Junction to case thermal resistance

Rth (c)

Per diode

Total

Coupling

Value

0.8

0.5

0.2

Unit

°C/W

°C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

IR * Reverse leakage current

VF ** Forward voltage drop

Pulse test : * tp = 5 ms, δ < 2 %

** tp = 380 µs, δ < 2%

Tests Conditions

Min. Typ. Max. Unit

VR = 300 V Tj = 25°C

80

µA

Tj = 125°C

80 800

IF = 40 A Tj = 25°C

1.25 V

Tj = 125°C

0.85 1

To evaluate the maximum conduction losses use the following equation :

P = 0.75 x IF(AV) + 0.0062 IF(RMS)2

DYNAMIC ELECTRICAL CHARACTERISTICS

Symbol

Tests Conditions

trr

IF = 0.5 A Irr = 0.25 A

IR = 1 A

Tj = 25°C

IF = 1 A dIF/dt = - 50 A/µs VR = 30 V

IRM Vcc = 200 V IF = 40 A dIF/dt = -200 A/µs Tj = 125°C

Sfactor

tfr

IF = 40 A dIF/dt = 200 A/µs,

VFR = 1.1 x VF max

VFP

Tj = 25°C

Min. Typ. Max.

50

60

13

0.3

450

5

Unit

ns

A

-

ns

V

2/3

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