Philips Semiconductors
High efficiency, high current DC/DC converter
Preliminary specification
TEA1210TS
SYMBOL
PARAMETER
Efficiency
η1
efficiency upconversion
η2
efficiency upconversion
η3
efficiency upconversion
η4
efficiency upconversion
Timing
fsw
switching frequency
fsync
synchronization clock input frequency
tstart
start-up time
tres
response time
Temperature
Tamb
Tmax
operating ambient temperature
internal cut-off temperature
CONDITIONS
MIN.
Tamb = 20 °C;
VI = 1.8 V; VO = 3.6 V;
note 5
IL = 1 mA
80
IL = 4 mA
84
IL = 100 mA
89
IL = 500 mA
89
IL = 1.5 A; note 6
73
Tamb = 80 °C;
VI = 1.8 V; VO = 3.6 V;
note 5
IL = 1 mA
78
IL = 4 mA
82
IL = 100 mA
87
IL = 500 mA
88
IL = 1.5 A; note 6
67
Tamb = 20 °C;
VI = 2.4 V; VO = 3.6 V;
note 5
IL = 1 mA
83
IL = 4 mA
87
IL = 100 mA
90
IL = 500 mA
92
IL = 1.5 A; note 6
84
Tamb = 80 °C;
VI = 2.4 V; VO = 3.6 V;
note 5
IL = 1 mA
81
IL = 4 mA
85
IL = 100 mA
88
IL = 500 mA
91
IL = 1.5 A; note 6
82
PWM mode
480
9
note 7
−
from standby to Po(max) −
−40
150
TYP.
82
86
91
91
75
80
84
89
90
72
86
90
93
94
86
83
87
90
93
85
600
13
6
25
+25
175
MAX. UNIT
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
−
%
720
kHz
20
MHz
−
ms
−
µs
+80
°C
200
°C
1999 Mar 08
10