IRFB13N50A 데이터 시트보기 (PDF) - International Rectifier
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IRFB13N50A Datasheet PDF : 8 Pages
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IRFB13N50A
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
10
Crss
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
12
ID = 14A
10
VDS = 400V
VDS = 250V
VDS = 100V
7
5
2
0
0
12
24
36
48
60
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
100
TJ= 150 °C
10
TJ = 25 °C
1
0.1
0.2
V GS = 0 V
0.5
0.8
1.1
1.4
V SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
10000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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