IRFR3707 데이터 시트보기 (PDF) - International Rectifier

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IRFR3707

HEXFET® Power MOSFET

International Rectifier 

IRFR/U3707

1000

100

10

3.5V

VGS

TOP

10.0V

9.0V

8.0V

7.0V

6.0V

5.0V

4.5V

BOTTOM 3.5V

1000

100

10

3.5V

VGS

TOP

10.0V

9.0V

8.0V

7.0V

6.0V

5.0V

4.5V

BOTTOM 3.5V

1

0.1

20µs PULSE WIDTH

Tj = 25°C

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

20µs PULSE WIDTH

Tj = 175°C

1

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

 TJ = 25 °C

 TJ = 175°C

10

3.0

 V DS= 15V

20µs PULSE WIDTH

4.0

5.0

6.0

7.0

8.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.5  ID = 61A

2.0

1.5

1.0

0.5

 VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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