IRFR9N20D 데이터 시트보기 (PDF) - International Rectifier
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IRFR9N20D Datasheet PDF : 10 Pages
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PD - 93919A
SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
IRFR9N20D
IRFU9N20D
HEXFET® Power MOSFET
RDS(on) max
ID
0.38Ω
9.4A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR9N20D
I-Pak
IRFU9N20D
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Typical SMPS Topologies
l Telecom 48V input Forward Converter
Notes through are on page 10
www.irf.com
Max.
9.4
6.7
38
86
0.57
± 30
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
1
6/29/00
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