IRF3315 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

일치하는 목록

IRF3315

HEXFET® Power MOSFET

International Rectifier 

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

INPUT NEW DATA

APPROVED IRF3315

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

INPUT NEW DATA

10

4.5V

20µs PULSE WIDTH

TJ = 25 °C

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

4.5V

10

20µs PULSE WIDTH

TJ = 175 °C

1

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

10

INPUT NEW DATA

TJ = 25 °C

TJ = 175 ° C

V DS= 50V

20µs PULSE WIDTH

1

4.0

5.0

6.0

7.0

8.0

9.0 10.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

www.irf.com

3.0 ID = 27A

2.5

INPUT NEW DATA

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

Share Link: