IRFP150 데이터 시트보기 (PDF) - International Rectifier

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IRFP150

HEXFET® Power MOSFET

International Rectifier 

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

1000

100

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

IRFP150N

10

4.5V

20us PULSE WIDTH

TJ = 25 oC

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

4.5V

20us PULSE WIDTH

TJ = 175 oC

1

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1000

100

TJ = 25 oC

TJ = 175 oC

10

1

4.0

5.0

6.0

7.0

8.0

9.0 10.0

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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3.0 ID = 36A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (o C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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