IRF7707 데이터 시트보기 (PDF) - International Rectifier
부품명
상세내역
일치하는 목록
IRF7707 Datasheet PDF : 8 Pages
| |||
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.2mm)
l Available in Tape & Reel
VDSS
-20V
PD -93996
IRF7707
HEXFET® Power MOSFET
RDS(on) max
22mΩ@VGS = -4.5V
33mΩ@VGS = -2.5V
ID
-7.0A
-6.0A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
1
2
3
G
4
1= D
2= S
3= S
4= G
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ , TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
D
8
7
6
S
5
8= D
7= S
6= S
5= D
TSSOP-8
Max.
-20
-7.0
-5.7
-28
1.5
1.0
0.01
±12
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
83
Units
°C/W
1
10/04/00
Share Link: 