IRF9530NS 데이터 시트보기 (PDF) - International Rectifier

부품명

상세내역

일치하는 목록

IRF9530NS

HEXFET® Power MOSFET

International Rectifier 

14

12

10

8

6

4

2

0

25

50

75

100 125 150 175

TC , Case Temperature ( °C)

Fig 9. Maximum Drain Current Vs.

Case Temperature

10

IRF9530NS/L

VDS

VGS

RG

RD

D.U.T.

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

-

+ VDD

Fig 10a. Switching Time Test Circuit

VGS

10%

td(on) tr

td(off) tf

90%

VDS

Fig 10b. Switching Time Waveforms

1 D = 0.50

0.20

0.10

0 .0 5

0.1

0 .0 2

0 .0 1

SING LE PU LS E

(THERMAL RESPONSE)

PD M

t1

t2

Notes:

1. Duty factor D = t1 / t 2

0.01

0.00001

0.0001

0.001

2. P eak TJ = P D M x Z th JC + T C

A

0.01

0.1

1

t1 , R ectangular Pulse D uration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Share Link: