HA7-5147 데이터 시트보기 (PDF) - Intersil
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HA7-5147 Datasheet PDF : 9 Pages
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HA-5147/883
Die Characteristics
DIE DIMENSIONS:
104.3 x 65 x 19 mils
2650 x 1650 x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
Metallization Mask Layout
BAL
WORST CASE CURRENT DENSITY:
3.6 x 105A/cm2 at 15mA
This device meets Glassivation Integrity Test Requirement
per MIL-STD-883 Method 2021 and MIL-I-38535 Paragraph
30.5.5.4.
SUBSTRATE POTENTIAL (Powered Up):
V-
TRANSISTOR COUNT:
63
PROCESS:
Bipolar Dielectric Isolation
HA-5147/883
BAL
-IN
V+
+IN
OUT
V-
NC
Spec Number 511009-883
5
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