IRF5Y5305CM 데이터 시트보기 (PDF) - International Rectifier
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IRF5Y5305CM Datasheet PDF : 7 Pages
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PD - 94028
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y5305CM
55V, P-CHANNEL
Product Summary
Part Number
IRF5Y5305CM
BVDSS
-55V
RDS(on) ID
0.065Ω -18A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n Low RDS(on)
n Avalanche Energy Ratings
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
-18*
-15
A
-72
75
W
0.6
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
V
Single Pulse Avalanche Energy ➁
160
mJ
Avalanche Current ➀
-16
A
Repetitive Avalanche Energy ➀
7.5
mJ
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
3.0
-55 to 150
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
11/3/00
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