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US1A Datasheet PDF : 4 Pages
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WTE
POWER SEMICONDUCTORS
US1A – US1K Pb
1.0A SURFACE MOUNT GLASS PASSIVATED ULTRAFAST DIODE
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
B
! Low Forward Voltage Drop, High Efficiency
! Surge Overload Rating to 30A Peak
D
! Low Power Loss
A
! Ultra-Fast Recovery Time
F
! Plastic Case Material has UL Flammability
Classification Rating 94V-O
C
HG
E
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
SMA/DO-214AC
Dim
Min
Max
A
2.50
2.90
B
4.00
4.60
C
1.20
1.60
D
0.152
0.305
E
4.80
5.28
F
2.00
2.44
G
0.051
0.203
H
0.76
1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@TL = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
@IF = 1.0A
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
US1A US1B US1D US1G US1J US1K
50
100
200
400
600
800
35
70
140
280
420
560
1.0
Unit
V
V
A
IFSM
30
A
VFM
IRM
trr
Cj
RJL
Tj, TSTG
1.0
1.4
10
500
50
15
30
-50 to +150
1.7
75
100
V
µA
nS
pF
°C/W
°C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
US1A – US1K
1 of 4
© 2006 Won-Top Electronics
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