UFB200FA20 데이터 시트보기 (PDF) - Vishay Semiconductors

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UFB200FA20

Insulated Ultrafast Rectifier Module, 240 A

Vishay Semiconductors 

Insulated Ultrafast

Rectifier Module, 240 A

UFB200FA20P

Vishay Semiconductors

VR = 200 V

L = 70 μH

0.01 Ω

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 9 - Reverse Recovery Parameter Test Circuit

IF

0

(3)

trr

ta

tb

(2) IRRM

(4)

Qrr

0.5 IRRM

dI(rec)M/dt (5)

(1) dIF/dt

(1) dIF/dt - rate of change of current

through zero crossing

(2) IRRM - peak reverse recovery current

(3) trr - reverse recovery time measured

from zero crossing point of negative

going IF to point where a line passing

through 0.75 IRRM and 0.50 IRRM

extrapolated to zero current.

0.75 IRRM

(4) Qrr - area under curve defined by trr

and IRRM

Qrr =

trr x IRRM

2

(5) dI(rec)M/dt - peak rate of change of

current during tb portion of trr

Fig. 10 - Reverse Recovery Waveform and Definitions

Document Number: 94087 For technical questions within your region, please contact one of the following:

Revision: 21-Jul-10

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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