TIP150 데이터 시트보기 (PDF) - Inchange Semiconductor
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TIP150 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
TIP150/151/152
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
TIP150
TIP151
TIP152
IC=10mA, IB=0
V(BR)CBO
Collector-base
breakdown voltage
TIP150
TIP151
TIP152
IC=1mA, IE=0
VCEsat-1
VCEsat-2
VCEsat-3
Collector-emitter saturation voltage IC=1A ,IB=10mA
Collector-emitter saturation voltage IC=2A ,IB=100mA
Collector-emitter saturation voltage IC=5A ,IB=250mA
VBE sat-1 Base-emitter saturation voltage
IC=2A ,IB=100mA
VBE sat-2 Base-emitter saturation voltage
IC=5A ,IB=250mA
TIP150 VCE=300V, IB=0
ICEO
Collector cut-off current TIP151 VCE=350V, IB=0
TIP152 VCE=400V, IB=0
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE-1
DC current gain
IC=2.5A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
hFE-3
DC current gain
VF
Diode forward voltage
COB
Output capacitance
Switching times
IC=7A ; VCE=5V
IF=7A
IE=0 ; VCB=10V;f=1MHz
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
VCC=250V; IC=5A
IB1=-IB2=250mA
tp=20μs;Duty Cycle≤2.0%
MIN TYP. MAX UNIT
300
350
V
400
300
350
V
400
1.5
V
1.5
V
2.0
V
2.2
V
2.3
V
250 μA
15
mA
150
50
15
3.5
V
150
pF
0.03
μs
0.18
μs
3.5
μs
1.6
μs
2
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