GP250MHB06S 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP250MHB06S Datasheet PDF : 10 Pages
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GP250MHB06S
ELECTRICAL CHARACTERISTICS
Tj = 25˚C unless stated otherwise.
Symbol
Parameter
I
CES
Collector cut-off current
IGES
VGE(TH)
Gate leakage current
Gate threshold voltage
V
Collector-emitter saturation voltage
CE(SAT)
IF
Diode forward current
I
Diode maximum forward current
FM
VF
Diode forward voltage
Cies
Input capacitance
Conditions
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tj = 125˚C
VGE = ±20V, VCE = 0V
IC = 10mA, VGE = VCE
V = 15V, I = 250A
GE
C
VGE = 15V, IC = 250A, Tj = 125˚C
DC
t = 1ms
p
IF = 250A,
IF = 250A, Tj = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
Min. Typ. Max. Units
-
-
15 mA
-
-
50 mA
-
-
1
µA
4
-
7.5
V
-
2.2 2.7
V
-
2.3 2.8
V
-
-
250 A
-
-
500
A
-
1.1 1.9
V
-
1.05 1.8
V
- 27000 -
pF
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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