STN1A60 데이터 시트보기 (PDF) - SemiWell Semiconductor

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STN1A60

Bi-Directional Triode Thyristor

SemiWell Semiconductor 

STN1A60/80

Electrical Characteristics

Symbol

Items

IDRM

Repetitive Peak Off-State

Current

VTM

I+GT1

I

-

GT1

I

-

GT3

I+GT3

V+GT1

V-GT1

V-GT3

V+GT3

VGD

(dv/dt)c

IH

Rth(j-c)

Rth(j-a)

Peak On-State Voltage

I

II

Gate Trigger Current

III

IV

I

II

Gate Trigger Voltage

III

IV

Non-Trigger Gate Voltage

Critical Rate of Rise Off-

State

Voltage at Commutation

Holding Current

Thermal Resistance

Thermal Resistance

Conditions

VD = VDRM, Single Phase, Half

Wave

TJ = 125 °C

IT = 1.5 A, Inst. Measurement

VD = 6 V, RL=10 Ω

VD = 6 V, RL=10 Ω

TJ = 125 °C, VD = 1/2 VDRM

TJ = 125 °C, [di/dt]c = -0.5 A/ms,

VD=2/3 VDRM

Junction to case

Junction to Ambient

Ratings

Unit

Min. Typ. Max.

-

-

0.5 mA

-

-

1.6

V

-

-

5

-

-

5

mA

-

-

5

-

7

12

-

-

1.8

-

-

1.8

V

-

-

1.8

-

-

2.0

0.2

-

-

V

2.0

-

- V/㎲

-

4.0

-

mA

-

-

50 °C/W

-

-

120 °C/W

2/6

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