SMBJ12AON 데이터 시트보기 (PDF) - ON Semiconductor
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SMBJ12AON Datasheet PDF : 6 Pages
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SMBJ12AON
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
DC Power Dissipation @ TL = 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
PPK
PD
RqJL
600
W
3.0
W
40
mW/°C
25
°C/W
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
PD
RqJA
0.55
W
4.4
mW/°C
226
°C/W
Operating and Storage Temperature Range
TJ, Tstg
-65 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non-repetitive at maximum IPPM and VCM, see electrical characteristics.
2. 1″ square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 4) = 30 A)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non-repetitive duty cycle.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Zener Voltage (Note 5)
Reverse Leakage Current
Clamping Voltage
IT = 1 mA
VRWM = 12 V
IPPM = 30.2 A
(Per Figure 1, Note 6)
VZ
IR
VCM
13.2
5. VZ measured at pulse test IT at an ambient temperature of 25°C.
6. Absolute Maximum Peak Current, IPPM.
Typ
13.75
Max
Unit
14.3
V
5.0
mA
19.9
V
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