SMAJ11A 데이터 시트보기 (PDF) - TSC Corporation
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SMAJ11A Datasheet PDF : 7 Pages
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Device
SMAJ160
SMAJ160A
SMAJ170
SMAJ170A
SMAJ188
SMAJ188A
Device
Marking
Code
SN
SP
SQ
SR
ST
SS
CREAT BY ART
Working
Peak
Reverse
Voltage
VWM
(V)
Breakdown Voltage
VBR (V)
at IT
Min
Max
160
178
218
160
178
197
170
189
231
170
189
209
188
209
255
188
209
231
SMAJ SERIES
Taiwan Semiconductor
Test
Current
IT
(mA)
1
1
1
1
1
1
Maximum
Clamping
Voltage at IPPM
Vc (V)
(Note5)
Maximum
Peak Pulse
Surge Current
IPPM
(A) (Note5)
287
1.0
259
1.2
304
1.0
275
1.1
344
0.9
328
0.9
Maximum
Reverse
Leakage
@ VWM
ID (μA)
1
1
1
1
1
1
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA=25°C per Fig. 2
2. Mounted on 5 x 5mm copper pads to each terminal
3. Lead temperature at TL=75°C
4. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
5. Peak pulse power waveform is 10/1000 μs
6. For Bi-Directional devices having VR of 10 volts and under, the IR limit is double.
Document Number: DS_D1411078
Version: N15
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