SKP253 데이터 시트보기 (PDF) - Sanken Electric co.,ltd.

부품명

상세내역

일치하는 목록

SKP253

MOSFET

Sanken Electric co.,ltd. 

MOS FET

SKP253

December 2005

Characteristic

Drain to Source breakdown Voltage

Electrical characteristics

Symbol

Test Conditions

MIN.

(Ta=25°C)

Limits

Unit

TYP. MAX.

V(BR)DSS ID=100μA,VGS=0V

250

V

Gate to Source Leakage Current

IGSS

VGS=±30V

±100 nA

Drain to Source Leakage Current

IDSS

VDS=250V, VGS=0V

100 μA

Gate Threshold Voltage

VTH

VDS=10V, ID=1mA

3.0

4.5

V

Forward Transconductance

Re(Yfs) VDS=10V, ID=10A

8

17

S

Static Drain to Source On-Resistance

RDS(on) ID=10A, VGS=10V

86

95 mΩ

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Ciss

VDS=25V

Coss

VGS=0V

f=1MHz

Crss

1600

280

pF

50

Turn-On Delay Time

td(on)

30

ID=10A, VDD≈120V

Rise Time

tr

RL=12Ω, VGS=10V

60

ns

Turn-Off Delay Time

td(off)

RG=5Ω

80

See Fig.2

Fall Time

tf

45

Source-Drain Diode Forward Voltage

VSD

ISD=20A,VGS=0V

1.0

1.5

V

.

Sanken Electric Co.,Ltd.

T02-004EA-051124

2/9

Share Link: