SKP04N60(2007) 데이터 시트보기 (PDF) - Infineon Technologies
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SKP04N60
(Rev.:2007)
(Rev.:2007)
Infineon Technologies
SKP04N60 Datasheet PDF : 13 Pages
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SKP04N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=4A,
VGE=0/15V,
R G =67Ω ,
Lσ1) =180nH,
Cσ1) =180pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=200V, IF=4A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
15
237
70
0.070
0.061
0.131
26 ns
18
284
84
0.081 mJ
0.079
0.160
180
- ns
15
-
165
-
130
- nC
2.5
-A
180
- A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=400V,IC=4A,
VGE=0/15V,
RG=67Ω,
Lσ1) =180nH,
Cσ1) =180pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=200V, IF=4A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
16
264
104
0.115
0.111
0.226
26 ns
19
317
125
0.132 mJ
0.144
0.277
230
- ns
23
-
227
-
300
- nC
4
-A
200
- A/µs
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2.2 Sep 07
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