RMDA20420 데이터 시트보기 (PDF) - Fairchild Semiconductor

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RMDA20420

20–42 GHz Broadband Driver Amplifier

Fairchild Semiconductor 

5 MIL THICK

ALUMINA

50Ω

RF INPUT

10,000pF

Vg2 alt

Vd1

Vd

(Positive) INTERCHANGEABLE Vd BOND PADS

(Do not use Vd2)

100pF

Die-Attach

80Au/20Sn

Vd2

Vd3

Vd4

5 MIL THICK

ALUMINA

50Ω

L<0.015"

4 places

Vd1

Vg2

2 MIL GAP

100pF

Vg

(Negative)

RF OUTPUT

Vg3

Vg4

INTERCHANGEABLE Vg BOND PADS

L<0.015"

10,000pF

Notes:

1. Die-attach with 80Au/20Sn.

2. Use 0.003" x 0.0005" gold ribbon for bonding.

3. RF input and output bonds should be less than 0.015" long with stress relief.

4. For currents > 370 mA connect all drain pads (Vd1, Vd3, & Vd4) to the 100 pF capacitor.

5. Back of chip is DC and RF ground.

6. Do not use Vd2 pad for drain bias connection.

Figure 4. Recommended Assembly and Bonding Diagram

Recommended Procedure (for biasing and operation)

CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE

DRAIN VOLTAGE (Vd) IS PRESENT CAN DAMAGE THE

AMPLIFIER.

The following sequence must be followed to properly test

the amplifier:

Step 4: Adjust gate bias voltage to set the quiescent current

of Idq = 350 mA.

Step 5: After the bias condition is established, the RF input

signal may now be applied at the appropriate frequency

band.

Step 1: Turn off RF input power.

Step 6: Follow turn-off sequence of:

Step 2: Connect the DC supply grounds to the ground of

the chip carrier. Slowly apply negative gate bias supply

voltage of -1.5V to Vg.

(i) Turn off RF input power,

(ii) Turn down and off drain voltage (Vd),

(iii) Turn down and off gate bias voltage (Vg).

Step 3: Slowly apply positive drain bias supply voltage of

+3.5V to Vd.

©2004 Fairchild Semiconductor Corporation

RMDA20420 Rev. D

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